应材料学院陈一民教授邀请，美国罗格斯大学卢毅成教授将于6月13-16日访问我校并做学术报告，欢迎感兴趣的师生参加。
报告时间：6月15日（周四）14:00
报告地点：知行楼424会议室
报告题目：Recent Progress in MZO TFT Technology
报告摘要：Thin Film Transistor (TFT) is a critically important device technology for large area electronics and systems, include displays, sensor arrays, and embedded power sources. The emerging wearable electronic systems demand the new TFT technology with multifunctional capability, low power consumption, and fast speed. The conventional silicon TFT technologies are facing severe challenges due to low mobility in amorphous silicon (a-Si) and non-uniformity in polycrystalline silicon TFTs.
There has been increasing interest in oxide-based TFTs for wearable applications. Zinc oxide (ZnO) – based TFT has been receiving considerable attention due to its higher electron mobility, transparency in visible light region, and superior radiation hardness over the Si TFTs. However, TFTs using the pure ZnO suffer from the instability issue. We have developed In-free MgxZn1-xO (MZO) as the TFT channel layer. Mg composition in the MgxZn1-xO is controlled below 6% (x ≤ 0.06) to avoid alloying disorder induced degradation. The stronger Mg-O bonding effectively suppresses the oxygen vacancy related defects and improves the electrical characteristics of ZnO-based TFTs. MZO TFTs technology exhibits superior thermal stability and smaller shift of threshold voltages under negative bias stress (NBS) tests than that of the ZnO counterpart, owing to less ionization and migration of oxygen vacancies. The MZO TFT technology presents a great impact on the future classes of low cost and multifunctional applications in wearable electronics. MZO TFT-based UV detector and bio-TFT are presented. In this talk, the new progress in MZO TFT technology, including the RF frequency tunable devices operating at GHz range and the high voltage TFT (HVTFT) on glass for PV inverter will also be reported.
报告人简介：Dr. Yicheng Lu is Distinguished Professor and Paul S. and Mary W. Monroe Faculty Scholar in the Department of Electrical and Computer Engineering of Rutgers University. He is also the graduate faculty in Materials Science and Engineering, and Biomedical Engineering. Currently, Dr. Lu is the Director of Microelectronics Research Laboratory (MERL). His major research field is micro- and nano-electronic materials and devices. Professor Lu’s group has pioneered various ZnO-based devices, including Schottky diode, high contrast and high speed UV light modulator, high speed UV photodetectors, nano-SAW biosensors, wireless UV detector, monolithically integrated tunable SAW (MITSAW) chips and RF frequency tuning device , MgZnO TFT with high stability, UV-TFT, and Bio-TFT, 3D ZnO photoelectrode for various solar cells, integrated ZnO nanostructure/GaN LEDs with enhanced light extraction efficiency, ZnO reconfigurable electronics on glass, and high voltage TFT (HVTFT) on glass for inverter in PV-SOG with over 600V blocking capability. From these works, Professor Lu has published over 210 refereed papers (150 journal papers) with over 10,000 citations, 1 book and 5 book chapters, and received 28 U.S. patents. Dr. Lu was a Co-Chairman of the 5th International Workshop of ZnO and Related Materials. He has been an organization committee member and co-chaired ZnO sessions for various conferences, including MRS, SPIE, EMC, etc.